Electrical properties of tetrapod zinc oxide thin films deposited by thermal-CVD method

N. Azhar, S. S. Shariffudin, I. H. Affendi, S. H. Herman, M. Rusop
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引用次数: 2

Abstract

Zinc oxide (ZnO) thin films were deposited by thermal chemical vapor deposition (TCVD) method. Gold (Au) metal was used as a catalyst to improve the growth of tetrapod ZnO structures. In this study, the substrates were deposited at 750°C to 800°C to study the temperature effect of tetrapod ZnO thin films. The surface morphology of ZnO thin films were characterized using field emission scanning electron microscope (FE-SEM). Energy dispersive X-ray (EDX) was analyzed to identify element composition of ZnO thin films. It exhibits the EDX spectrum was successful grown product which contains Zn and O only. The electrical properties were measured using 2-point probe I-V measurement. From I-V curve, the resistivity of ZnO thin films decreases, the films become more conductive as deposition temperature increased. The optical properties were measured through photoluminescence (PL) with wavelength 325 nm to 900 nm.
热cvd法沉积四足氧化锌薄膜的电学性能
采用热化学气相沉积(TCVD)法制备氧化锌(ZnO)薄膜。以金(Au)为催化剂,促进四足ZnO结构的生长。在本研究中,衬底在750℃~ 800℃下沉积,研究四足ZnO薄膜的温度效应。采用场发射扫描电镜(FE-SEM)对ZnO薄膜的表面形貌进行了表征。利用能量色散x射线(EDX)分析了ZnO薄膜的元素组成。结果表明,EDX光谱是成功生长的产物,仅含Zn和O。电学性能采用两点探针I-V测量。从I-V曲线可以看出,随着沉积温度的升高,ZnO薄膜的电阻率降低,导电性能增强。通过波长为325 ~ 900 nm的光致发光(PL)测量了材料的光学性能。
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