Low on-resistance and high-reliability power MOSFETs

PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference Pub Date : 1988-04-11 DOI:10.1109/PESC.1988.18195

I. Yoshida, M. Morikawa, S. Ohtaka, T. Okabe

引用次数: 4

Abstract

Techniques for the design of scaled-down cell-structure power MOSFETs with low on-resistance and high reliability are described. The cell structure is optimized by a three-dimensional computer analysis. The thin gate oxide is protected using a polysilicon protection diode. A planar device with a breakdown voltage of 50 V and an on-resistance of 150 m Omega -mm/sup 2/ has been realized.<>

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低导通电阻和高可靠性功率mosfet

介绍了具有低导通电阻和高可靠性的微缩单元结构功率mosfet的设计技术。通过三维计算机分析优化了细胞结构。使用多晶硅保护二极管保护薄栅极氧化物。实现了击穿电压为50 V，导通电阻为150 m ω -mm/sup 2/的平面器件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference

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