Xiaolong Xu, Jinjin Li, Xueshen Wang, Q. Zhong, Y. Zhong, W. Cao, Wei Li, Jian Chen, Zhi-zhong Zhao, Yingqian Gao, Zheng Liu, Qing He
{"title":"Investigation of Superconducting Titanium films for Transition Edge Sensors","authors":"Xiaolong Xu, Jinjin Li, Xueshen Wang, Q. Zhong, Y. Zhong, W. Cao, Wei Li, Jian Chen, Zhi-zhong Zhao, Yingqian Gao, Zheng Liu, Qing He","doi":"10.1109/CPEM49742.2020.9191808","DOIUrl":null,"url":null,"abstract":"High performance transition-edge sensors (TES) require the superconducting thin films with suitable critical temperature ($T_{c}$) for different applications. In this paper, we fabricate and characterize superconducting titanium (Ti) films for a He-3 cryogenic TES system with a sputtering technique. correlation between resistivity and transition temperature has analyzed. The sputtering pressure, power and film thickness are investigated to realize the modulation of $T_{c}$ range from 462 mK to 552 mK.","PeriodicalId":373216,"journal":{"name":"2020 Conference on Precision Electromagnetic Measurements (CPEM)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 Conference on Precision Electromagnetic Measurements (CPEM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CPEM49742.2020.9191808","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
High performance transition-edge sensors (TES) require the superconducting thin films with suitable critical temperature ($T_{c}$) for different applications. In this paper, we fabricate and characterize superconducting titanium (Ti) films for a He-3 cryogenic TES system with a sputtering technique. correlation between resistivity and transition temperature has analyzed. The sputtering pressure, power and film thickness are investigated to realize the modulation of $T_{c}$ range from 462 mK to 552 mK.