Controlled CVD‐growth of multiwalled CNTs

G. Duesberg, F. Kreupl, A. Graham, M. Liebau, E. Unger, Z. Gabric, W. Hönlein
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引用次数: 2

Abstract

Many applications of carbon nanotubes (CNTs) require a material with defined properties, however most synthesis routes yield CNTs of varying purity, structure, diameter, and length. Chemical vapor deposition (CVD) allows a good control over the CNTs synthesis and leads to promising results, however the effect of many parameters remains unclear. In order to improve this situation a comprehensive study was carried out under highly controlled conditions. The used CVD reactor was capable to perform deposition processes with temperature deviations smaller than 1°K. The substrates were patterned Fe films with a thickness below 10 nm on silicon/siliconoxide. The effects of the conditioning of the catalyst prior to growth, growth temperature, and growth time were investigated. The synthesis in a hydrogen/acetylene atmosphere yielded pure multi‐walled CNTs with diameters between 10 – 20 nm. The length of the CNTs was accurately controlled by the growth time. The density of the CNTs can be varied by the preconditio...
多壁碳纳米管的可控CVD生长
碳纳米管(CNTs)的许多应用需要具有明确性质的材料,然而大多数合成路线产生不同纯度、结构、直径和长度的碳纳米管。化学气相沉积(CVD)可以很好地控制碳纳米管的合成,并导致有希望的结果,但许多参数的影响尚不清楚。为了改善这种情况,在高度控制的条件下进行了一项全面的研究。所使用的CVD反应器能够在温度偏差小于1°K的情况下进行沉积过程。衬底是在硅/氧化硅上制作厚度小于10 nm的铁薄膜。考察了生长前条件、生长温度和生长时间对催化剂的影响。在氢/乙炔气氛中合成得到了直径在10 - 20 nm之间的纯多壁CNTs。通过生长时间精确控制CNTs的长度。碳纳米管的密度可以根据前提条件而变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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