Trap-Limited Space-Charge Limited Current in 2D Thin Film Dielectric

C. Y. Kee, Y. Ang, L. Ang
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Abstract

Due to the lack of intrinsic charge in insulator or dielectric, significant charge injection from electrode into the solid is required and the transport is known as space charge limited current (SCLC) in solid. By measuring the current-voltage characteristics, one can estimate the mobility of the charge injection. For 1D model transport, it is a well-known technique for both trap-free [1] and trap-filled [2] solids. For a thin film setting, it is more complicated that requires numerical solution even for a trap-free solid [3] . Such thin film setting can even approach the limit of monolayer of 2D materials [4] . In this paper, we consider a trap-filled solid and formulate a SCLC model for different contact geometries relevant to 2D thin film. By solving the Cauchy-type singular integral equation, our results show that the calculated results are different from traditional models. Using our model, we can estimate the mobility for a given trap distribution and geometrical setting. The developed SCLC model developed here shall offer a practical tool for more accurate estimation of carrier mobility of ultrathin dielectric slab used in various applications of high current transport in nanodiodes [5] including electrical contact and dielectric breakdown.
二维薄膜电介质中的限阱空间-电荷限流
由于绝缘体或电介质中缺乏本征电荷,需要从电极向固体中注入大量电荷,这种传输称为固体中的空间电荷限制电流(SCLC)。通过测量电流-电压特性,可以估计电荷注入的迁移率。对于一维模型输运,对于无陷阱[1]和充满陷阱[2]的固体来说,这是一种众所周知的技术。对于薄膜设置,则更为复杂,即使对于无陷阱的固体也需要数值求解[3]。这种薄膜设置甚至可以接近二维材料单层的极限[4]。在本文中,我们考虑了一个充满陷阱的固体,并制定了一个与二维薄膜相关的不同接触几何形状的SCLC模型。通过求解柯西型奇异积分方程,得到了与传统模型不同的计算结果。利用我们的模型,我们可以估计给定圈闭分布和几何设置的迁移率。本文开发的SCLC模型将为更准确地估计超薄介质板载流子迁移率提供实用工具,该模型可用于纳米二极管[5]中各种高电流输运应用,包括电接触和介质击穿。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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