Breakdown of semiconductor devices and influence of the interface from passivated termination

Abstract

For many available commercial semiconductor devices, operation in the breakdown region is not allowed because of risk of failure. For specialized devices operation is permitted in specified conditions. Reverse electrical characteristics including the breakdown region for typical devices are presented and analyzed. A breakdown region caused by current flow in the bulk, due to carrier avalanche multiplication is exhibited for specialized devices from room temperature up to 150 °C. Nonetheless above 150 °C because of high level of leakage current flow at the interface from passivated termination, device failure may take place before the avalanche bulk breakdown is reached. For other devices even at lower temperature, excessive flow of current at the interface is a limitation to reach the avalanche bulk breakdown.