Ion Milling Method for Revealing the HgCdTe MBE-grown Structure

Abstract

Using ion milling, the evolution of defect structure of Molecular Beam Epitaxy (MBE)-grown HgCdTe (MCT) has been followed from the time of the milling down to the full relaxation of defects induced by the treatment. It was found that in the case of ion-milled HgCdTe stored at the room temperature, the relaxation process stops only after several months. The idea of the work was to present possibly most comprehensive pattern of the nature and dynamics of defects in MCT heterostructures fabricated with MBE. Selected publications illustrate full examination methodology, which was applied in an attempt to use ion milling for revealing the defect structure of MBE-grown HgCdTe.