LATED: Lifetime-Aware Tag for Enduring Design

Seyedeh Golsana Ghaemi, Amir Mahdi Hosseini Monazzah, Hamed Farbeh, S. Miremadi
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引用次数: 12

Abstract

Nowadays, leakage energy constitutes up to80% of total cache energy consumption and tag array isresponsible for a considerable fraction of static energyconsumption. An approach to reduce static energyconsumption is to replace SRAMs by STT-RAMs with nearzero leakage power. However, a problem of an STT-RAMcell is its limited write endurance. In spite of previousstudies which have targeted the data array, in this studySTT-RAMs are used in the L1 tag array. To solve the writeendurance problem, this paper proposes an STTRAM/SRAM tag architecture. Considering the spatiallocality of memory references, the lower significant bitlinesof the tag update more. The SRAM part handles theupdates in the bit-lines which their lifetime is less than thedesired lifetime. The proposed architecture is evaluated bythe gem5 simulator running Mibench benchmark suits. The evaluation results recommend implementing less than30% of bit-lines of the STT-RAM-based tag array bySRAMs for a 5-year lifetime. Moreover, the static energyconsumption is reduced up to 82 % in comparison withSRAM tag array.
相关:持久设计的寿命感知标签
如今,泄漏能量占总缓存能耗的80%,标签阵列占静态能耗的相当大一部分。以泄漏功率接近于零的stt - ram取代sram是降低静态能耗的一种方法。然而,STT-RAMcell的一个问题是它的写入持久性有限。尽管以前的研究已经针对数据阵列,但在本研究中,在L1标签阵列中使用了ystt - ram。为了解决写持久性问题,本文提出了一种stram /SRAM标签架构。考虑到内存引用的空间局部性,标签的低有效位线更新更多。SRAM部分处理位行中的更新,这些更新的生存期小于期望的生存期。通过运行Mibench基准套件的gem5模拟器对所提出的体系结构进行了评估。评估结果建议在5年的寿命期内,使用ysram实现小于30%的基于stt - ram的标签阵列的位行。此外,与sram标签阵列相比,静态能耗降低了82%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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