3D Microstrip Line Taper on Ultra-low Dielectric Constant Substrate

Nawaf R. Almuqati, H. Sigmarsson
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Abstract

In this paper, a new microstrip three-dimensional taper is presented. This new taper enables circuit-in-substrate (CIS) integration of high-quality microwave components with a microstrip line designed on a thick, ultra-low dielectric constant substrate. The width of microstrip lines on thick low dielectric constant materials is considerably large and can create a shunt capacitive loading when using edge mount connectors. The microstrip line can be tapered in the planar direction to reduce the shunt capacitance at the cost of added mismatch. The proposed technique adds a vertical tapering of the substrate, which results in a constant impedance across the substrate and reduces the mismatch between the microstrip and the connector. For verification, the 3D microstrip line taper is fabricated and measured. Full-wave simulation results and measurements are compared to validate the proposed design.
超低介电常数基片上的三维微带线锥度
本文提出了一种新型微带三维锥度。这种新的锥度使高质量的微波元件与设计在厚的超低介电常数衬底上的微带线集成在衬底电路(CIS)中。在厚的低介电常数材料上的微带线的宽度相当大,并且在使用边缘安装连接器时可以创建并联电容负载。微带线可以在平面方向上变细以减少并联电容,但代价是增加失配。所提出的技术增加了基板的垂直变细,从而在基板上产生恒定的阻抗,并减少了微带和连接器之间的不匹配。为了验证,制作并测量了三维微带线锥度。全波仿真结果和测量结果进行了比较,验证了所提出的设计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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