D. Kuylenstierna, A. Vorobiev, G. Subramanyam, S. Gevorgian
{"title":"Tuneable Electromagnetic Bandgap Structures Based on Ba0.25Sr0.75Ti03 Parallel-Plate Varactors on Silicon Coplanar Waveguides","authors":"D. Kuylenstierna, A. Vorobiev, G. Subramanyam, S. Gevorgian","doi":"10.1109/EUMA.2003.341102","DOIUrl":null,"url":null,"abstract":"Experimental performance of Electromagnetic Band Gap (EBG) structures, based on Coplanar Waveguides (CPW) periodically loaded by high-Q-factor ferroelectric varactors is reported. The varactors are made of Ba0.25Sr0.75Ti03 films grown by laser ablation on thick Pt/Au/Pt electrodes. Due to the thick bottom electrodes the varactors have Q-factor larger than 40 at 45 GHz, which is higher in comparison with semiconductor varactors. Up to 30% tuning of the pass band edge is achieved at ¿20 dB level under 25V DC bias.","PeriodicalId":156210,"journal":{"name":"2003 33rd European Microwave Conference, 2003","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 33rd European Microwave Conference, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.2003.341102","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Experimental performance of Electromagnetic Band Gap (EBG) structures, based on Coplanar Waveguides (CPW) periodically loaded by high-Q-factor ferroelectric varactors is reported. The varactors are made of Ba0.25Sr0.75Ti03 films grown by laser ablation on thick Pt/Au/Pt electrodes. Due to the thick bottom electrodes the varactors have Q-factor larger than 40 at 45 GHz, which is higher in comparison with semiconductor varactors. Up to 30% tuning of the pass band edge is achieved at ¿20 dB level under 25V DC bias.