Silicone Rubber Nanocomposites filled with Silicone Nitride and Silicone Dioxide Nanofillers: Comparison of Electrical Treeing and Partial Discharge Characteristics

A. Nasib, M. H. Ahmad, N. Azrin, Z. Nawawi, M. Sidik, M. Jambak, R. F. Kurnia
{"title":"Silicone Rubber Nanocomposites filled with Silicone Nitride and Silicone Dioxide Nanofillers: Comparison of Electrical Treeing and Partial Discharge Characteristics","authors":"A. Nasib, M. H. Ahmad, N. Azrin, Z. Nawawi, M. Sidik, M. Jambak, R. F. Kurnia","doi":"10.1109/PECON.2018.8684054","DOIUrl":null,"url":null,"abstract":"This paper presents comparative study on electrical treeing with its associated partial discharge (PD) grown in silicone rubber (SiR) samples having different concentration of silicon dioxide (SiO<inf>2</inf>) and silicon nitride (Si<inf>3</inf>N<inf>4</inf>) nanofillers. Despite many studies on electrical treeing in SiR with SiO<inf>2</inf> nanofillers, none of the publication have reported on Si<inf>3</inf>N<inf>4</inf> nanofillers for the purpose of the electrical tree growth suppression. By applying a fixed AC voltage of 12 kV at power frequency of 50 Hz, the treeing experiments were conducted on unfilled SiR, SiR/SiO<inf>2</inf>, and SiR/Si<inf>3</inf>N<inf>4</inf> nanocomposites with 1, 3, and 5 weight percentages (wt%) of filler weight concentration and the treeing parameters were observed together with its correlated PD patterns. This study found that among the samples of SiR, SiR/SiO<inf>2</inf> and SiR/Si<inf>3</inf>N<inf>4</inf>, the best nanocomposites to suppress the electrical tree growth is SiR/Si<inf>3</inf>N<inf>4</inf>. Moreover, when the electrical treeing progresses, the PD activity shows increment thus indicating correlation in both parameters which can be a key tool for monitoring unseen treeing in opaque samples.","PeriodicalId":278078,"journal":{"name":"2018 IEEE 7th International Conference on Power and Energy (PECon)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 7th International Conference on Power and Energy (PECon)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PECON.2018.8684054","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

This paper presents comparative study on electrical treeing with its associated partial discharge (PD) grown in silicone rubber (SiR) samples having different concentration of silicon dioxide (SiO2) and silicon nitride (Si3N4) nanofillers. Despite many studies on electrical treeing in SiR with SiO2 nanofillers, none of the publication have reported on Si3N4 nanofillers for the purpose of the electrical tree growth suppression. By applying a fixed AC voltage of 12 kV at power frequency of 50 Hz, the treeing experiments were conducted on unfilled SiR, SiR/SiO2, and SiR/Si3N4 nanocomposites with 1, 3, and 5 weight percentages (wt%) of filler weight concentration and the treeing parameters were observed together with its correlated PD patterns. This study found that among the samples of SiR, SiR/SiO2 and SiR/Si3N4, the best nanocomposites to suppress the electrical tree growth is SiR/Si3N4. Moreover, when the electrical treeing progresses, the PD activity shows increment thus indicating correlation in both parameters which can be a key tool for monitoring unseen treeing in opaque samples.
氮化硅和二氧化硅纳米填料填充的硅橡胶纳米复合材料:电树和局部放电特性的比较
本文对不同浓度二氧化硅(SiO2)和氮化硅(Si3N4)纳米填料硅橡胶(SiR)样品中生长的电树及其相关局部放电(PD)进行了比较研究。尽管有许多关于SiO2纳米填料在SiR中的电树生长的研究,但尚未有出版物报道Si3N4纳米填料用于抑制电树生长。在50 Hz的工频下,施加12 kV的固定交流电压,对填充率分别为1、3、5的未填充SiR、SiR/SiO2和SiR/Si3N4纳米复合材料进行了成树实验,观察了成树参数及其相关PD模式。本研究发现,在SiR、SiR/SiO2和SiR/Si3N4样品中,SiR/Si3N4纳米复合材料抑制电树生长的效果最好。此外,当电树形进行时,PD活动显示增量,从而表明两个参数之间的相关性,这可以成为监测不透明样品中未见树形的关键工具。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信