First demonstration of threshold voltage control by sub-1V back-gate biasing for thin body and buried-oxide (TBB) Ge-on-insulator (GOI) MOSFETs for low-power operation

Abstract

For the first time, fabrication of TBB-GOI MOSFETs and substantial Vth shifts within 1V back biasing have been demonstrated. The Vth control by extremely low back-gate biases was achieved by using the EOT-scaled BOX structure of ~12nm. This sub-1V back-gate biasing scheme can reduce the power consumption in LSIs without optional voltage supply or charge pump circuits which have large impact to reducing chip size and process cost.