AlGaN/GaN HEMTs on sapphire

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI:10.1109/ICCDCS.2002.1004070

V. Kumar, I. Adesida

引用次数: 1

Abstract

This paper presents the recent progress in the development of fabrication processes and device performance of recessed as well as non recessed AlGaN/GaN HEMTs at the University of Illinois. Maximum drain current density as high as 1.31 A/mm, record high extrinsic transconductance of 402 mS/mm, unity gain cut-off frequency (f/sub T/) of 107 GHz, and maximum frequency of oscillation (f/sub max/) of 148 GHz were demonstrated for recessed AlGaN/GaN HEMTs with a gate length of 0.15 /spl mu/m grown by MOCVD. Results for MBE-grown devices are also presented.

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本文介绍了伊利诺伊大学在嵌入式和非嵌入式AlGaN/GaN hemt的制造工艺和器件性能方面的最新进展。通过MOCVD生长的栅极长度为0.15 /spl mu/m的嵌入式AlGaN/GaN HEMTs，最大漏极电流密度高达1.31 A/mm，创纪录的高外在跨导率为402 mS/mm，单位增益截止频率(f/sub - T/)为107 GHz，最大振荡频率(f/sub - max/)为148 GHz。本文还介绍了mbe生长器件的实验结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)

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