A 60-GHz direct-conversion transmitter in 130-nm CMOS

Abstract

This paper describes the system architecture and design procedure for a 60-GHz transmitter in 130-nm CMOS process. The transmitter achieves a saturation power output of better than 4 dBm and an output-referred 1-dB compression point of 2 dBm. The LO to RF port isolation is better than 27 dB from 57 to 65 GHz. To the best of the authorspsila knowledge, this is the first reported 60-GHz transmitter in 130-nm CMOS that incorporates on-chip filtering.