A 1800 V, 300 A nondestructive RBSOA tester for bipolar transistors

PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference Pub Date : 1988-04-11 DOI:10.1109/PESC.1988.18279

G. Carpenter, F. Lee, D. Chen

引用次数: 3

Abstract

The design and fabrication of a 1800 V, 300 A nondestructive transistor reverse-bias second breakdown (RBSB) tester are reported. An innovative MOSFET shunt circuit is the key to the high power capability of the tester. Its operation is described and comprehensive test results are presented.<>

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1800v, 300a无损双极晶体管RBSOA测试仪

报道了一种1800v, 300a的晶体管反偏置二次击穿(RBSB)无损测试仪的设计与制作。创新的MOSFET分流电路是测试仪高功率性能的关键。介绍了其工作原理，并给出了综合试验结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference

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