Improving the Light Extraction Efficiency of GaN-Based Light-Emitting Diode

Lianjun Zhang, Z. Fan, Gang Liu
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Abstract

The light extraction efficiency caused by total internal reflection is low. Based on the analysis of the existing technology, a new design scheme is proposed in this paper to improve the light extraction efficiency. The air gap photonic crystal is embedded on the GaN-based patterned sapphire substrate, which can reduce line misalignment and improve light extraction efficiency. The internal structure of the GaN-based LED epitaxial layer is composed of an electron emission layer, a quantum well in the light-emitting recombination region, and an electron blocking layer. Experimental results show that this method significantly improves the extraction efficiency of LED light.
提高gan基发光二极管的光提取效率
全内反射引起的光提取效率较低。本文在分析现有技术的基础上,提出了一种新的设计方案,以提高光提取效率。将气隙光子晶体嵌入到氮化镓图像化蓝宝石衬底上,可以减少线的错位,提高光提取效率。gan基LED外延层的内部结构由电子发射层、发光复合区内的量子阱和电子阻挡层组成。实验结果表明,该方法显著提高了LED光的提取效率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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