MSDRAM, A2RAM and Z2-FET performance benchmark for 1T-DRAM applications

Abstract

In this study, we propose a benchmark of performance between three promising 1T-DRAM device structures on SOI substrate: MSDRAM, A2RAM and $\mathrm{Z}^{2} -$FET. For a fair comparison, TCAD simulation with the same basic calibration and typical 28FDSOI technological parameters was used. The merits and limitations of each variant are discussed.