V. Skryshevsky, A. Laugier, V.I. Strikha, V. Vikulov, A. Kaminski
{"title":"Effect of porous silicon layer re-emission on silicon solar cell photocurrent","authors":"V. Skryshevsky, A. Laugier, V.I. Strikha, V. Vikulov, A. Kaminski","doi":"10.1109/PVSC.1996.564075","DOIUrl":null,"url":null,"abstract":"The feasibility of the improvement of crystalline Si solar cells is considered by employing a thick porous Si (PS) layer. The influence of re-emission, absorption and reflectivity of PS on the photocurrent of the solar cell are studied using numerical simulations and experimental verification. The measurement of additional photocurrent caused by re-emission of PS is shown to allow to evaluate the external quantum efficiency of PS photoluminescence which can achieve approximately 4-5% on n-Si. In this case the effect of PS re-emission on short circuit current of commercial solar cells reaches up to a few percent for terrestrial applications. The calculated total benefit of a PS antireflection coating on short-circuit current can be up to 35-41%.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"300 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1996.564075","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
The feasibility of the improvement of crystalline Si solar cells is considered by employing a thick porous Si (PS) layer. The influence of re-emission, absorption and reflectivity of PS on the photocurrent of the solar cell are studied using numerical simulations and experimental verification. The measurement of additional photocurrent caused by re-emission of PS is shown to allow to evaluate the external quantum efficiency of PS photoluminescence which can achieve approximately 4-5% on n-Si. In this case the effect of PS re-emission on short circuit current of commercial solar cells reaches up to a few percent for terrestrial applications. The calculated total benefit of a PS antireflection coating on short-circuit current can be up to 35-41%.