Fully Automated RF-Thermal Stress Workbench with S-Parameters Tracking for GaN Reliability Analysis

D. Saugnon, J. Tartarin, B. Franc, Hassan Maher, Francois Boone
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引用次数: 5

Abstract

The rapid development of III-V technologies for telecommunication and radar markets need the meeting of performances (power, frequency) criteria as well as reliability assessment. Nitride HEMT technologies are known to reveal a large variety of failure electrical signatures, and it is also largely accepted that multi-tools (multi physics) approaches is the only suitable way to understand the failure mechanisms and to improve the technologies. Experimental stress workbenches usually allow to track a given number of static/dynamic parameters, but specific characterization are only performed at initial and final steps on the devices. This paper proposes a new approach with S-parameters measurement performed during RF stresses without removing the devices under test (in a thermally controlled oven). Then intermediate knowledge of the electrical (small signal) behavior of the devices can be assessed, and crossed with large-signal and static time-dependent signatures.
具有s参数跟踪的全自动射频热应力工作台用于GaN可靠性分析
电信和雷达市场III-V技术的快速发展需要满足性能(功率、频率)标准以及可靠性评估。众所周知,氮化HEMT技术可以揭示各种各样的失效电子特征,而且人们普遍认为,多工具(多物理场)方法是理解失效机制和改进技术的唯一合适方法。实验应力工作台通常允许跟踪给定数量的静态/动态参数,但具体的表征仅在设备的初始和最后步骤进行。本文提出了一种在射频应力下进行s参数测量的新方法,而无需移除被测器件(在热控烤箱中)。然后,可以评估设备的电气(小信号)行为的中间知识,并与大信号和静态时间相关签名交叉。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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