A Novel Broadband Microstrip to Waveguide Transition at W band with High Manufacturing Tolerance Suitable for MMIC Packaging

Mousumi Sarkar, Arijit Majumder
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引用次数: 7

Abstract

This paper presents a novel broadband microstrip to waveguide transition using substrate integrated waveguide (SIW) at W band suitable for MMIC packaging. The microstrip line is first transformed to SIW and then SIW is transformed to air filled reduced height rectangular waveguide with height being equal to the substrate thickness. The reduced height waveguide is brought to full height through a λ/4 chebyshev stepped impedance transformer. Design is robust and suitable for manufacturing with little variation in performance due to assembly. One back to back transition is developed. Experimental result shows that return loss of better than 10 dB is achieved over a bandwidth of 26 % with insertion loss of 0.52 dB at centre frequency for single transition.
一种适用于MMIC封装的高制造公差的W波段宽带微带波导转换
本文提出了一种适用于MMIC封装的新型宽带微带波导转换方法,该方法采用W波段的衬底集成波导。首先将微带线转换为SIW,然后将SIW转换为高度等于衬底厚度的充气减高矩形波导。通过λ/4切比雪夫阶跃阻抗变压器使降低高度的波导达到全高度。设计坚固,适合制造,由于装配而导致的性能变化很小。一个背靠背的过渡是发展起来的。实验结果表明,在26%的带宽下,回波损耗小于10 dB,单次转换中心频率的插入损耗为0.52 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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