Simulation Research on Photoelectric Parameters of Optical Voltage Sensors with ZnS Doped Dielectric Materials

Abstract

Advanced measurement technology is increasingly required under the background of smart grid. Compared to traditional sensors, optical sensors based on electroluminescence (EL) have good performance on electric insulation, which are promising in display and measurement of electric field. To study the photoelectric properties of electroluminescent dielectric materials, the model of AC electroluminescent devices (ACEL) need to be built and calculated. Using density functional method, we evaluate the energy band structure of electroluminescent dielectric materials. On this basis, the optical emission characteristics of electroluminescent devices driven by different voltages are also simulated. The results indicate that when E is higher than the threshold electric intensity but lower than 7.75 kV/mm, there exists a linear relationship between Lm and E, after which the $L_{m}-E$ curve tends to saturate significantly. Introducing the dielectric layer with a high dielectric constant would reduce the luminescence threshold voltage to less than 40 V, so as to improve the security and broaden the application range of photoelectric sensors.