Single-Event Effects Induced by Heavy Ions in 40nm Resistive Random Access Memory

Abstract

We investigated the heavy ion single-event effect (SEE) susceptibility of 40nm monolithic resistance random access memory (RRAM). The results show that single-event upset (SEU) of the memory cell occurred only in the write operation. The SEU of the cell was caused by the single-event transient (SET) of the peripheral circuit and the selection transistor. The dominant SEE type in dynamic modes was single-event functional interruption (SEFI). Some SEFIs could revert on their own in the next cycle, the rest needed a power cycle. We classified and analyzed all SEFIs into different types according to the number of cycles (or recovery mode) and the address distribution of the error data. Different types of SEFI are caused by SEU in different registers.