Effect of deposition temperature to electrical, structural and optical properties of amorphous carbon thin film prepared by TCVD

F. Mohamad, U. Noor, M. Rusop
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Abstract

Amorphous carbon (a-C) thin films have been prepared by thermal chemical vapor deposition (TCVD) technique at different temperature. The preparation involved argon (Ar), and camphor as carrier gas and carbon source respectively. The effects of deposition temperature in the a-C thin film on electrical, structural and optical properties was characterized by using Advantest R6243 DC Voltage Current Source/Monitor and SemiPro Curve Software, Scanning Electron Microscopy (SEM) and UV-VIS-NIR spectroscopy. The current-voltage (I-V) measurement studies demonstrate that the conductivity increased along the deposition temperature. There are also significant changes in structural and optical band gap as deposition temperature varies.
沉积温度对TCVD法制备非晶碳薄膜电学、结构和光学性能的影响
采用热化学气相沉积(TCVD)技术在不同温度下制备了非晶碳(a-C)薄膜。该工艺以氩气和樟脑为载气和碳源。利用Advantest R6243直流电压电流源/监视器和SemiPro曲线软件、扫描电镜(SEM)和紫外-可见-近红外光谱(UV-VIS-NIR)分析了沉积温度对a-C薄膜电学、结构和光学性能的影响。电流-电压(I-V)测量研究表明,电导率随沉积温度的增加而增加。随着沉积温度的变化,结构和光带隙也发生了显著的变化。
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