The ability of CW operation of THz lasing from group-V donors in silicon

2010 2nd IEEE International Workshop Thz Radiation: Basic Research and Applications Pub Date : 2010-11-04 DOI:10.1109/TERA.2010.5619935

V. Shastin, R. Zhukavin, K. Kovalevsky, V. V. Tsyplenkov, S. Pavlov, H. Hubers

引用次数: 0

Abstract

Terahertz stimulated emission (4–6 THz) from optically excited group-V donors (phosphor P, antimony Sb, arsenic As, bismuth Bi) in axially compressed silicon crystal has been studied. As shown CW laser operation of P, Sb, As donors become reachable due to the laser threshold decrease induced by the stress.

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硅中v族给体太赫兹激光连续操作的能力

研究了轴向压缩硅晶体中光激发v族给体(磷P、锑Sb、砷As、铋Bi)的太赫兹受激辐射(4-6太赫兹)。如图所示，由于应力引起的激光阈值降低，连续激光操作的P、Sb、As供体可以到达。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2010 2nd IEEE International Workshop Thz Radiation: Basic Research and Applications

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