Comparison of growth rate, roughness, and surface morphology of Cu and W thin films prepared by pulsed laser deposition

M. Michalka, F. Uherek, J. Bruncko
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Abstract

The aim of this study was to compare some differences between the growth rate, roughness and surface morphology of Cu and W layers. The growth of metal thin films was performed on silicon substrate. The layers were prepared by the pulsed laser deposition (PLD) using THG Nd:YAG laser at 355 nm. The number of laser pulses (time of deposition) varied from 1000 to 20000. The characteristics of the layers were examined using the methods of atomic force microscopy (AFM) and scanning electron microscopy (SEM). Results show that the growth rate of W is higher than Cu.
脉冲激光沉积Cu和W薄膜的生长速率、粗糙度和表面形貌的比较
本研究的目的是比较Cu层和W层的生长速度、粗糙度和表面形貌的差异。在硅衬底上进行了金属薄膜的生长。采用脉冲激光沉积(PLD)技术,利用THG Nd:YAG激光在355nm波长下制备了这些层。激光脉冲数(沉积时间)从1000到20000不等。利用原子力显微镜(AFM)和扫描电子显微镜(SEM)对层的形貌进行了表征。结果表明,W的生长速率高于Cu。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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