A 23-34 GHz Wideband GaN Low-Noise Amplifier for 5G Millimeter-Wave Applications

Abstract

This paper presents a design of 23-34 GHz wideband low-noise amplifier (LNA) based on gallium-nitride (GaN) technology. The LNA circuit employs an input matching network with few components and particularly reduces the noise of the second stage at the high frequency, which makes the circuit achieve sub-1dB noise performance in the whole bandwidth, while completing noise and impedance matching. Because inductive peaking technique and stagger tuning technique are adopted, the small-signal gain of the LNA is from 22.1 dB to 25.2 dB over the whole bandwidth. With 30.9 dBm maximum output-referred third-order intercept point (OIP3) and 42 dBm maximum input power (Pin,max), the LNA also achieves high linearity and high reliability.