Study of SEU of 28nm UTBB-FDSOI Device by Heavy Ions and TCAD Simulation

Abstract

Single Event Upsets in 28nm UTBB-FDSOI SRAM with several types of radiation hardened Bit-cells are studied by heavy ion irradiation test and TCAD simulation. Heavy-ion SEU cross section of the FDSOI SRAM cell are two decades lower than an equivalent cell in planar bulk technology as reported. Through the hardened design, the 8T bit-cells SRAM is able to reach the upset-immune for low LET heavy ions.