Circuit-semiconductor Dynamic Coupling Analysis for PiN Diode Reverse Recovery

Abstract

To analyze the complex nonlinear phenomenon of PiN diode under short-pulse and short-time dynamic process, this paper proposes a circuit-semiconductor dynamic coupling analysis for PiN diode reverse recovery process. The key parameters in each stage of reverse recovery process are theoretically explained, including duration, turn-off loss, and voltage overshoot. Firstly, the dynamic coupling principle between semiconductor chip and commutation loop is clarified via reverse bias voltage and forward current. Key parameters in reverse recovery process are quantitatively calculated as well. Secondly, an interaction simulation coupled with circuit and semiconductor was established. Finally, the dynamic coupling analysis and key parameter calculation are verified through simulation and experimental results of Infineon 1200V/40A anti-parallel diode of IGBT. This study can be used as an effective technical means to guide the selection of PiN diode type and the optimization of commutation circuit design.