An equivalent three-dipole model for IC radiated emissions based on TEM cell measurements

Siming Pan, Jingook Kim, Sungnam Kim, Jaesu Park, Heon-Cheol Oh, J. Fan
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引用次数: 33

Abstract

An equivalent dipole model is proposed in this paper to represent the source of radiated electromagnetic emissions from an integrated circuit (IC). The height of an IC is usually much smaller than its length and width, so only three dipole moments are sufficient to characterize an IC in terms of its electromagnetic emissions. The dipole moments can be extracted from three TEM cell measurements. The radiated fields from the IC can then be calculated based on the extracted dipole sources. This IC emission model with three dipole moments is validated using the far-field measurements in a semi anechoic chamber for a test IC. For complex structures, it is desirable that the extracted dipole moments can be incorporated into a commercial full-wave tool as equivalent sources to simulate the radiations from an IC. This is demonstrated using an approach developed in this paper.
基于瞬变电磁炉测量的等效三偶极子模型
本文提出了一种等效偶极子模型来表示集成电路(IC)的辐射电磁发射源。集成电路的高度通常比它的长度和宽度小得多,所以只有三个偶极矩就足以表征集成电路的电磁发射。偶极矩可以从三个TEM细胞测量中提取出来。然后可以根据提取的偶极子源计算集成电路的辐射场。使用测试IC的半消声室中的远场测量验证了具有三个偶极矩的IC发射模型。对于复杂结构,希望提取的偶极矩可以合并到商用全波工具中,作为等效源来模拟IC的辐射。本文开发的方法证明了这一点。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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