Characterization of GAN/ALN on SI Using Conventional RF Magnetron Sputtering

Abstract

Gallium nitride is a III-nitride material that commonly used in light emitting diode (LED) and power electronic devices. Gallium nitride has direct energy bandgap and excellent thermal stability. The growth of GaN are commercially available using metal organic chemical vapour deposition (MOCVD), hydride vapour phase epitaxy (HVPE) and molecular beam epitaxy (MBE). Recently, the growth of GaN using magnetron sputtering have attracted increasing attention due to low temperature deposition, low cost and the capability of magnetron sputtering produce good crystal quality of GaN. Growth of GaN directly on silicon wafer will lead to the presence of defects. Thus, the AlN layer uses as a nucleation layer before the growth of GaN.