A history of low power electronics: how it began and where it's headed

J. Meindl
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引用次数: 20

Abstract

The invention of the bipolar transistor in 1948 and the integrated circuit in 1958 as well as the announcement of CMOS logic circuits in 1963 demonstrated the critical basis for modern low power electronics. Future opportunities for low power gigascale integration will be governed by a hierarchy of physical limits whose five levels can be codified as: (1) fundamental, (2) material, (3) device, (4) circuit and (5) system. Through analysis of the attributes of a hypothetical quasi-asymptotic 10 nm single electron MOSFET and its local interconnection network, it is apparent that such a device would have an unaffordably large switching error rate. However, it is feasible that low power electronics may well achieve a capability within several hundred times the switching energy of the 10 nm single electron MOSFET.
低功耗电子的历史:它是如何开始的,它将走向何方
1948年双极晶体管和1958年集成电路的发明,以及1963年CMOS逻辑电路的宣布,为现代低功耗电子技术奠定了关键基础。未来低功耗千兆级集成的机会将受到物理限制的层次结构的支配,其五个层次可以被编纂为:(1)基础,(2)材料,(3)器件,(4)电路和(5)系统。通过分析假设的准渐近10nm单电子MOSFET及其局部互连网络的属性,可以明显看出这样的器件将具有难以承受的大开关错误率。然而,低功耗电子器件可以很好地实现在10nm单电子MOSFET开关能量的数百倍内的能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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