A 110GHz inductor-less CMOS frequency divider

Seongwoong Lim, Wasanthamala Badalawa, M. Fujishima
{"title":"A 110GHz inductor-less CMOS frequency divider","authors":"Seongwoong Lim, Wasanthamala Badalawa, M. Fujishima","doi":"10.1109/ASSCC.2009.5357179","DOIUrl":null,"url":null,"abstract":"An inductor-less 110GHz ring-type frequency divider (RILFD) has been proposed. Body-injection and biasing technique have been adopted to achieve high speed and divide-by-three operation and fine tuning of operation frequency. The RILFD was fabricated by a 1P12M 65nm bulk CMOS process. The core size is 10.8×8.5μm2. The locking range is 9.1%, from 100.8 to 110.4GHz, under varying of body-bias voltage from −0.2V to 0.4V. The RILFD consumes 4.5mW at the supply voltage of 1V excluding an output buffer. The output phase noise is −117.6dBc/Hz at 1MHz offset. This work has been achieved the smallest core size among frequency dividers reported to date operating over 100GHz.","PeriodicalId":263023,"journal":{"name":"2009 IEEE Asian Solid-State Circuits Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2009.5357179","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

An inductor-less 110GHz ring-type frequency divider (RILFD) has been proposed. Body-injection and biasing technique have been adopted to achieve high speed and divide-by-three operation and fine tuning of operation frequency. The RILFD was fabricated by a 1P12M 65nm bulk CMOS process. The core size is 10.8×8.5μm2. The locking range is 9.1%, from 100.8 to 110.4GHz, under varying of body-bias voltage from −0.2V to 0.4V. The RILFD consumes 4.5mW at the supply voltage of 1V excluding an output buffer. The output phase noise is −117.6dBc/Hz at 1MHz offset. This work has been achieved the smallest core size among frequency dividers reported to date operating over 100GHz.
110GHz无电感CMOS分频器
提出了一种无电感的110GHz环形分频器(RILFD)。采用体注入和偏置技术,实现了高速三分运算和工作频率的微调。RILFD采用1P12M 65nm块体CMOS工艺制备。核心大小为10.8×8.5μm2。当体偏置电压在- 0.2V到0.4V范围内变化时,锁定范围为9.1%,范围为100.8 ~ 110.4GHz。RILFD在电源电压为1V时消耗4.5mW,不包括输出缓冲器。在1MHz偏移时,输出相位噪声为- 117.6dBc/Hz。这项工作已经实现了迄今为止在100GHz以上工作的分频器中最小的核心尺寸。
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