Towards Temperature Insensitive Nanoscale CMOS Circuits with Adaptively Regulated Voltage Power Supplies

Mingyu Zhu, Yingtao Jiang, Mei Yang, Xiaohang Wang
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Abstract

In this paper, we show that the temperature-induced performance drop seen in nanoscale CMOS circuitscan be tackled by powering the circuits with adaptively regulated voltage power supplies. Essentially, when temperature rises, the supply voltage will be bumped up to offset otherwise performance degradation. To avoid thermal over-drift as chip temperature exceeds its operation range, a voltage limiteris integrated into the proposed power supply to cap the supply voltage. Using this proposed adaptive voltage source to power individual CMOS logic gates and/or subsystems will free the chips from using expensive high-precision temperature sensors for thermal management and performance tuning. Experiments on various benchmark circuits, which are implemented with a 45nm CMOS technology, have confirmed that the circuit delay variation can be reduced to 15%~30% over a wide temperature range (0℃ to 90℃), a sharp contrast to the large delay variations (50%~75%)observed in most IC designs where a constant power supply is employed.
具有自适应稳压电源的温度不敏感纳米级CMOS电路
在本文中,我们证明了温度引起的性能下降可以通过使用自适应稳压电源供电来解决。从本质上讲,当温度升高时,电源电压将升高以抵消性能下降。为了避免芯片温度超过其工作范围时的热过漂,在建议的电源中集成了电压限制器以限制电源电压。使用这种提出的自适应电压源为单个CMOS逻辑门和/或子系统供电,将使芯片免于使用昂贵的高精度温度传感器进行热管理和性能调整。采用45纳米CMOS技术实现的各种基准电路的实验证实,在宽温度范围(0℃至90℃)内,电路延迟变化可以减少到15%~30%,这与大多数使用恒定电源的IC设计中观察到的大延迟变化(50%~75%)形成鲜明对比。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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