Copper gallium diselenide photocathodes for solar photoelectrolysis

B. Marsen, B. Cole, S. Dorn, R. Rocheleau, E. Miller
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引用次数: 2

Abstract

Copper chalcopyrite films exhibit properties suitable for solar energy conversion processes such as direct bandgap, and excellent carrier transport. To explore the possibilities of solar-powered hydrogen production by photoelectrolysis using these materials, we have synthesized p-type polycrystalline CuGaSe2 films by vacuum co-evaporation of the elemental constituents, and performed physical and electrochemical characterizations of the resulting films and electrodes. Based on CuGaSe2 material with 1.65 eV bandgap, a 2.2 micron thick electrode exhibited an outdoor 1-sun photocurrent of 16 mA/cm2, while a 0.9 micron thin device still produced 12.6 mA/cm2 in conjunction with vigorous gas evolution. Flatband potential measurements and bias voltage requirements for saturation photocurrents indicate a valence band position to high for practical device implementation. Future photoelectrolysis devices may be based on copper chalcopyrites with lower valence band maximum in conjunction with a suitable auxiliary junction.
太阳能光电解用二硒化铜镓光电阴极
铜黄铜矿薄膜具有适合太阳能转换过程的性能,如直接带隙和优良的载流子输运。为了探索利用这些材料光解太阳能制氢的可能性,我们通过真空共蒸发元素成分合成了p型多晶CuGaSe2薄膜,并对所得薄膜和电极进行了物理和电化学表征。在带隙为1.65 eV的CuGaSe2材料上,2.2微米厚的电极产生的室外1太阳光电流为16 mA/cm2,而0.9微米薄的电极仍然产生12.6 mA/cm2的光电流,并伴有强烈的气体释放。平坦带电位测量和饱和光电流的偏置电压要求表明,价带位置对于实际器件实施来说太高了。未来的光电解器件可能基于具有更低价带最大值的铜黄铜矿,并结合合适的辅助结。
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