Simulation of Quantum Current in Double Gate MOSFETs: Vortices in Electron Transport

Abstract

Quantum simulation of electronic transport in double gate (DG) field-effect transistors (FETs) and FinFETs is usually deemed to be required as the devices are scaled to the nanometer length-scale. Here, we present results obtained using a simulation program to model ballistic quantum transport in these devices. Our quantum simulations show the presence of quasi bound electronic states in the channel and Fano-interference phenomenon in the transport behavior of ultra-thin body (UTB) Si DG MOSFETs. Vortices in electron wavefunctions are also reported at energies at which transmission zeros (antiresonance) occur.