Impact of Bi doping on the structural and optical properties of the lead-free double perovskites (Cs2SnCl6:Bi3+) for optoelectronic applications

Ajay Kumar, N. Sharma, R. Saha, Samishta Choudhary, S. Chakrabarti
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Abstract

The lead-free halide-based double perovskites (Cs2SnCl6) have gained much attention due to its promising optoelectronic properties, non-toxic nature, and relatively better stability as compared to lead-based perovskites. In the current work, the cost-effective hydrothermal method is employed to synthesize the Bi-doped double perovskite material. Here, systematic incorporation of Bi3+ in Cs2SnCl6 nanocrystal is highly essential to improve the optoelectronic properties and modulate the luminescence. Here, Bi3+ is used as a dopant for host-Cs2SnCl6 nanocrystal and as-synthesis material preserves its cubic structures up to a certain amount of Sn4+ replacement by Bi3+. Such doped and as-synthesized perovskites are characterized in detail by using photoluminescence (PL), Ultraviolet (UV-Vis) spectroscopy, and X-ray diffraction (XRD). The PL results show that luminescence peaks around 393 nm are shifted towards the higher wavelength (lower energy) after the appropriate doping of Bi in double perovskite. The UV-Vis spectroscopy exhibits the absorption edge of the as-synthesize and Bi-doped perovskites around ~310 nm and a slight shift is observed after Bi incorporation as compared to the as-synthesized one. Also, bandgap of such perovskites lies in the range of 3.28 eV–3.62 eV. The XRD results demonstrate the diffraction peaks of the Cs2SnCl6 double perovskites at 14.55°, 24.27°, and 29.03°, which originated from the planes of (111), (220), (222) respectively. Finally, chromaticity plots (obtained from the PL) confirm the enhancement of blue luminescence due to the Bi-incorporation. Therefore, all the results confirm that highly stable Bi-doped Cs2SnCl6 perovskites can be a suitable candidate for fabricating several wavelength-tuneable optoelectronic devices.
Bi掺杂对光电用无铅双钙钛矿(Cs2SnCl6:Bi3+)结构和光学性能的影响
与铅基钙钛矿相比,无铅卤化物基双钙钛矿(Cs2SnCl6)因其具有良好的光电性能、无毒特性和相对更好的稳定性而受到广泛关注。本研究采用经济高效的水热法制备双掺杂钙钛矿材料。因此,在Cs2SnCl6纳米晶体中系统地掺入Bi3+对于改善光电性能和调节发光是非常必要的。在这里,Bi3+被用作宿主- cs2sncl6纳米晶体的掺杂剂,并且作为合成材料保留了其立方结构,直到一定数量的Sn4+被Bi3+取代。通过光致发光(PL)、紫外(UV-Vis)光谱和x射线衍射(XRD)对这些掺杂和合成的钙钛矿进行了详细的表征。结果表明,在双钙钛矿中适当掺杂铋后,在393 nm附近的发光峰向更高波长(较低能量)偏移。紫外可见光谱显示,合成钙钛矿和掺铋钙钛矿的吸收边缘在~310 nm左右,与合成钙钛矿相比,掺铋后钙钛矿的吸收边缘有轻微的位移。钙钛矿的带隙在3.28 eV ~ 3.62 eV之间。XRD结果表明,Cs2SnCl6双钙钛矿的衍射峰分别位于(111)、(220)、(222)面,分别位于14.55°、24.27°和29.03°。最后,色度图(从PL获得)证实了由于bi掺入而增强的蓝色发光。因此,所有的结果都证实了高稳定的双掺杂Cs2SnCl6钙钛矿可以成为制造多种波长可调谐光电器件的合适候选材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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