Xiwen Liu, Zichao Ma, M. Chan, W. Liao, Lining Zhang
{"title":"High Performance MoS2 N-Channel MOSFETs","authors":"Xiwen Liu, Zichao Ma, M. Chan, W. Liao, Lining Zhang","doi":"10.1109/ISNE.2019.8896506","DOIUrl":null,"url":null,"abstract":"In this paper, we have demonstrated high performance back-gated MoS<inf>2</inf> MOSFETs with scandium (Sc) contact and high-k ZrO<inf>2</inf> dielectrics for improved contact resistance and electron mobility. Record drain current of 200 µA/µm has been achieved for 1-µm channel length multilayer MoS<inf>2</inf> MOSFETs on ZrO<inf>2</inf>/Si substrates. The intrinsic contact resistance of low work function metal Sc on exfoliated MoS<inf>2</inf> with strong gating effect on source region is significantly decreased to 0.9 kΩ·µm. By taking the impact of contact resistance into consideration, the intrinsic mobility extracted from Y function technique is 132 cm<sup>2</sup>/Vs, 3 times higher than SiO<inf>2</inf> substrate, originating from the significant screening effect of high-k ZrO<inf>2</inf> dielectrics on the impurity scattering.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 8th International Symposium on Next Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2019.8896506","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, we have demonstrated high performance back-gated MoS2 MOSFETs with scandium (Sc) contact and high-k ZrO2 dielectrics for improved contact resistance and electron mobility. Record drain current of 200 µA/µm has been achieved for 1-µm channel length multilayer MoS2 MOSFETs on ZrO2/Si substrates. The intrinsic contact resistance of low work function metal Sc on exfoliated MoS2 with strong gating effect on source region is significantly decreased to 0.9 kΩ·µm. By taking the impact of contact resistance into consideration, the intrinsic mobility extracted from Y function technique is 132 cm2/Vs, 3 times higher than SiO2 substrate, originating from the significant screening effect of high-k ZrO2 dielectrics on the impurity scattering.
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