Novel materials solutions and simulations for nanoelectromechanical switches

F. Streller, G. E. Wabiszewski, D. Durham, Fan Yang, Jing Yang, Y. Qi, D. Srolovitz, A. Rappe, R. Carpick
{"title":"Novel materials solutions and simulations for nanoelectromechanical switches","authors":"F. Streller, G. E. Wabiszewski, D. Durham, Fan Yang, Jing Yang, Y. Qi, D. Srolovitz, A. Rappe, R. Carpick","doi":"10.1109/HOLM.2015.7355122","DOIUrl":null,"url":null,"abstract":"Nanoelectromechanical (NEM) switches are a candidate to replace solid-state transistors due to their low power consumption. However, the reliability of the contact interface limits the commercialization of NEM switches, since for practical purposes, the electrical contact should be able to physically open and close up to a quadrillion (1015) times without failing due to adhesion (by sticking shut) or contamination (reducing switch conductivity). These failure mechanisms are not well understood, and materials that exhibit the needed performance have not yet been demonstrated. This study presents the development of platinum silicide (PtxSi) as a promising NEM switch contact material. Using controlled solid-state diffusion of thin films of amorphous silicon and platinum, PtxSi was formed over a range of stoichiometries (1≤x≤3). The platinum-rich silicide phase (Pt3Si) may be a particularly ideal contact material for NEM switches due to its combination of mechanical robustness with metal-like conductivity. We then present a novel, high-throughput contact material screening method for NEM contact materials based on atomic force microscopy (AFM) that enables billions of contact cycles in laboratory timeframes for arbitrary material pairs. Self-mated Pt contacts showed more than three orders-of-magnitude increase in contact resistance after 2·109 cycles due to the growth of insulating tribopolymer. Finally, we present density functional theory (DFT) and molecular dynamics (MD) based studies to understand tribopolymer formation and growth. These calculations show that irreversible stress-induced polymerization processes are strongly affected by the ability of the molecule to displace laterally. Additionally, lower interaction energies between the model organic molecules and the PtxSi surface compared to Pt are found. This combination of experimental and theoretical methods in the framework of a materials genome effort aims to ultimately lead to accelerated discovery of suitable contact materials for NEM switches and to their commercialization.","PeriodicalId":448541,"journal":{"name":"2015 IEEE 61st Holm Conference on Electrical Contacts (Holm)","volume":"252 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 61st Holm Conference on Electrical Contacts (Holm)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HOLM.2015.7355122","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

Nanoelectromechanical (NEM) switches are a candidate to replace solid-state transistors due to their low power consumption. However, the reliability of the contact interface limits the commercialization of NEM switches, since for practical purposes, the electrical contact should be able to physically open and close up to a quadrillion (1015) times without failing due to adhesion (by sticking shut) or contamination (reducing switch conductivity). These failure mechanisms are not well understood, and materials that exhibit the needed performance have not yet been demonstrated. This study presents the development of platinum silicide (PtxSi) as a promising NEM switch contact material. Using controlled solid-state diffusion of thin films of amorphous silicon and platinum, PtxSi was formed over a range of stoichiometries (1≤x≤3). The platinum-rich silicide phase (Pt3Si) may be a particularly ideal contact material for NEM switches due to its combination of mechanical robustness with metal-like conductivity. We then present a novel, high-throughput contact material screening method for NEM contact materials based on atomic force microscopy (AFM) that enables billions of contact cycles in laboratory timeframes for arbitrary material pairs. Self-mated Pt contacts showed more than three orders-of-magnitude increase in contact resistance after 2·109 cycles due to the growth of insulating tribopolymer. Finally, we present density functional theory (DFT) and molecular dynamics (MD) based studies to understand tribopolymer formation and growth. These calculations show that irreversible stress-induced polymerization processes are strongly affected by the ability of the molecule to displace laterally. Additionally, lower interaction energies between the model organic molecules and the PtxSi surface compared to Pt are found. This combination of experimental and theoretical methods in the framework of a materials genome effort aims to ultimately lead to accelerated discovery of suitable contact materials for NEM switches and to their commercialization.
纳米机电开关的新材料解决方案和模拟
纳米机电(NEM)开关因其低功耗而成为取代固态晶体管的候选器件。然而,触点接口的可靠性限制了NEM开关的商业化,因为出于实际目的,电触点应该能够物理地打开和关闭多达一千万亿(1015)次,而不会因粘附(通过粘合)或污染(降低开关的导电性)而失败。这些失效机制还没有被很好地理解,而且还没有证明材料表现出所需的性能。本文介绍了硅化铂(PtxSi)作为一种有前途的NEM开关触点材料的发展。通过控制非晶硅和铂薄膜的固态扩散,PtxSi在一定的化学计量范围内(1≤x≤3)形成。富铂硅化物相(Pt3Si)可能是一种特别理想的NEM开关触点材料,因为它结合了机械坚固性和金属样导电性。然后,我们提出了一种基于原子力显微镜(AFM)的新型,高通量的NEM接触材料筛选方法,该方法可以在实验室时间框架内对任意材料对进行数十亿次接触循环。在2·109次循环后,由于绝缘摩擦聚合物的生长,自配Pt触点的接触电阻增加了3个数量级以上。最后,我们提出了基于密度泛函理论(DFT)和分子动力学(MD)的研究来理解摩擦聚合物的形成和生长。这些计算表明,不可逆应力引起的聚合过程受到分子横向位移能力的强烈影响。此外,与Pt相比,模型有机分子与PtxSi表面的相互作用能更低。在材料基因组努力的框架内,这种实验和理论方法的结合旨在最终加速发现适用于NEM开关的接触材料并实现其商业化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信