LOW FREQUENCY NOISE CONVERSION IN FETs UNDER NONLINEAR OPERATION

F. Danneville, B. Tamen, A. Cappy, J. B. Juraver, O. Llopis, J. Graffeuil
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引用次数: 1

Abstract

The conversion mechanisms of microscopic low frequency noise sources (e.g. generation-recombination noise sources) located in the channel of a FET (Field Effect Transistor), in the presence of a large RF signal, are investigated. It is shown that the base-band (low frequency) input gate noise voltage spectral density is strongly dependent on the magnitude of the input RF power applied to the FET. Moreover, the microscopic generation-recombination noise sources distributed along the channel are also responsible of up-converted input gate noise voltage spectral density around the RF frequency.
非线性工作下场效应管的低频噪声转换
研究了场效应晶体管(FET)沟道中存在较大射频信号时,微小低频噪声源(如产生-复合噪声源)的转换机制。结果表明,基带(低频)输入栅极噪声电压谱密度强烈依赖于施加于FET的输入射频功率的大小。此外,沿通道分布的微观产生复合噪声源也对RF频率附近上转换输入栅极噪声电压谱密度负责。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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