F. Danneville, B. Tamen, A. Cappy, J. B. Juraver, O. Llopis, J. Graffeuil
{"title":"LOW FREQUENCY NOISE CONVERSION IN FETs UNDER NONLINEAR OPERATION","authors":"F. Danneville, B. Tamen, A. Cappy, J. B. Juraver, O. Llopis, J. Graffeuil","doi":"10.1142/S021947750100041X","DOIUrl":null,"url":null,"abstract":"The conversion mechanisms of microscopic low frequency noise sources (e.g. generation-recombination noise sources) located in the channel of a FET (Field Effect Transistor), in the presence of a large RF signal, are investigated. It is shown that the base-band (low frequency) input gate noise voltage spectral density is strongly dependent on the magnitude of the input RF power applied to the FET. Moreover, the microscopic generation-recombination noise sources distributed along the channel are also responsible of up-converted input gate noise voltage spectral density around the RF frequency.","PeriodicalId":191232,"journal":{"name":"The Random and Fluctuating World","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Random and Fluctuating World","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1142/S021947750100041X","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The conversion mechanisms of microscopic low frequency noise sources (e.g. generation-recombination noise sources) located in the channel of a FET (Field Effect Transistor), in the presence of a large RF signal, are investigated. It is shown that the base-band (low frequency) input gate noise voltage spectral density is strongly dependent on the magnitude of the input RF power applied to the FET. Moreover, the microscopic generation-recombination noise sources distributed along the channel are also responsible of up-converted input gate noise voltage spectral density around the RF frequency.