Review of SiGe process technology and its impact on RFIC design

2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280) Pub Date : 2002-06-02 DOI:10.1109/MWSYM.2002.1011586

A. Das, M. Huang, J. Mondal, D. Kaczman, C. Shurboff, S. Cosentino

引用次数: 4

Abstract

Reviews recently published SiGe BiCMOS technologies for RFIC design. Performance and integration trends in SiGe HBTs are discussed. Performance of passive devices, such as an inductor, plays a key role in RF design. We review approaches to realize high Q inductor on a Si substrate. Finally, interaction of HBT performance with design is illustrated through LNA design.

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回顾SiGe工艺技术及其对RFIC设计的影响

评论最近发表的SiGe BiCMOS技术用于RFIC设计。讨论了SiGe HBTs的性能和集成趋势。无源器件(如电感器)的性能在射频设计中起着关键作用。我们回顾了在硅衬底上实现高Q电感的方法。最后，通过LNA设计说明HBT性能与设计的交互作用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)

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