Issues in high-frequency noise characterization and modeling of MOSFETs

2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks Pub Date : 1900-01-01 DOI:10.1109/RFIT.2005.1598889

Chih-Hung Chen

引用次数: 1

Abstract

This paper provides an overview on the major issues in the high-frequency noise characterization of deep submicron MOSFETs for RF IC applications. It includes the HF noise parameter measurements, test structure design, parameter de-embedding, noise source extraction, physics-based noise models and noise sources implementations.

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mosfet高频噪声表征与建模问题

本文概述了射频集成电路应用中深亚微米mosfet高频噪声特性的主要问题。包括高频噪声参数测量、测试结构设计、参数去嵌入、噪声源提取、基于物理的噪声模型和噪声源实现。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks

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