A fully integrated Phase-locked loop with leakage current compensation in 65-nm CMOS technology

Se-Chun Park, Seung-Baek Park, Soo-Won Kim
{"title":"A fully integrated Phase-locked loop with leakage current compensation in 65-nm CMOS technology","authors":"Se-Chun Park, Seung-Baek Park, Soo-Won Kim","doi":"10.1109/ICCE.2015.7066538","DOIUrl":null,"url":null,"abstract":"In this study, a fully integrated Phase-locked loop (PLL) that is applicable to Universal Flash Storage (UFS) systems is presented. The fully integrated PLL is realized using a MOS capacitor as an on-chip loop filter (LF). To compensate for leakage current in the LF, a leakage current compensation scheme is presented. With the leakage compensation scheme, the peak-to-peak jitter and rms jitter are 40ps and 7.62ps, respectively. The area of the LF was reduced by around a sixteenth part compared with a metal insulator metal (MIM) capacitor.","PeriodicalId":169402,"journal":{"name":"2015 IEEE International Conference on Consumer Electronics (ICCE)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Conference on Consumer Electronics (ICCE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCE.2015.7066538","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

In this study, a fully integrated Phase-locked loop (PLL) that is applicable to Universal Flash Storage (UFS) systems is presented. The fully integrated PLL is realized using a MOS capacitor as an on-chip loop filter (LF). To compensate for leakage current in the LF, a leakage current compensation scheme is presented. With the leakage compensation scheme, the peak-to-peak jitter and rms jitter are 40ps and 7.62ps, respectively. The area of the LF was reduced by around a sixteenth part compared with a metal insulator metal (MIM) capacitor.
65纳米CMOS技术中漏电流补偿的完全集成锁相环
在这项研究中,提出了一个完全集成的锁相环(PLL),适用于通用闪存(UFS)系统。全集成锁相环采用MOS电容作为片上环路滤波器(LF)实现。为了补偿LF中的漏电流,提出了一种漏电流补偿方案。采用泄漏补偿方案时,峰间抖动和均方根抖动分别为40ps和7.62ps。与金属绝缘体金属(MIM)电容器相比,LF的面积减少了约十六分之一。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信