Yongjun Shi, Dan Li, Shengwei Gao, Yihua Zhang, Li Geng
{"title":"A 112Gb/s Low-Noise PAM-4 Linear Optical Receiver in 28nm CMOS","authors":"Yongjun Shi, Dan Li, Shengwei Gao, Yihua Zhang, Li Geng","doi":"10.1109/EDSSC.2019.8753978","DOIUrl":null,"url":null,"abstract":"A 112Gb/s PAM-4 linear optical receiver with low noise, high linearity in 28nm CMOS is presented. The receiver signal chain consists of a transimpedance amplifier (TIA), a continuous time linear equalizer (CTLE), a variable gain amplifier (VGA), and an output buffer. PMOS CML logic is used based on the device characteristics. The low-noise topology and novel gain control techniques together enable state-of-the-art performance. The receiver achieves 2.72$\\mu$ Arms input-referred noise current, 71dB $\\Omega$ transimpedance gain and 37 GHz bandwidth. It is able to provide 18.5dB dynamic range to support maximum input overload current of 1.8mApp. The total harmonica distortion (THD) is below 5% under 660mVpp output swing. This receiver consumes 96.8mW from 1.5V supply.","PeriodicalId":183887,"journal":{"name":"2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2019.8753978","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A 112Gb/s PAM-4 linear optical receiver with low noise, high linearity in 28nm CMOS is presented. The receiver signal chain consists of a transimpedance amplifier (TIA), a continuous time linear equalizer (CTLE), a variable gain amplifier (VGA), and an output buffer. PMOS CML logic is used based on the device characteristics. The low-noise topology and novel gain control techniques together enable state-of-the-art performance. The receiver achieves 2.72$\mu$ Arms input-referred noise current, 71dB $\Omega$ transimpedance gain and 37 GHz bandwidth. It is able to provide 18.5dB dynamic range to support maximum input overload current of 1.8mApp. The total harmonica distortion (THD) is below 5% under 660mVpp output swing. This receiver consumes 96.8mW from 1.5V supply.