Depletion Based Digital and Analogue Circuits with n-Channel IGZO Thin Film Transistors

G. Carvalho, M. Pereira, A. Kiazadeh, V. Tavares
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Abstract

In this work, both analogue and digital depletion-mode single channel transistor circuits are presented and are simulated using an n-channel IGZO technology with $\boldsymbol{V}_{\boldsymbol{TH}}= -\mathrm{0}.\mathbf{87}\mathbf{V}$. A logic family is introduced, suppressing the need for an additional voltage level and level restoring circuitry. Furthermore, in the analogue domain, a depletion current mirror topology is presented with demonstrated small current error. Finally, the current mirror is used in the design of an OpAmp, achieving a simulated open-loop gain of 45 dB, CMRR of 58 dB, unity-gain frequency of 444 kHz and a phase margin of 71 degrees.
基于损耗的n通道IGZO薄膜晶体管数字和模拟电路
在这项工作中,提出了模拟和数字耗尽模式单通道晶体管电路,并使用n通道IGZO技术进行了模拟,其中$\boldsymbol{V}_{\boldsymbol{TH}}= -\ mathm {0}.\mathbf{87}\mathbf{V}$。引入了一个逻辑族,抑制了对附加电压电平和电平恢复电路的需求。此外,在模拟域中,提出了一种电流误差小的耗尽电流镜像拓扑结构。最后,将该电流镜应用于OpAmp的设计中,实现了45 dB的模拟开环增益、58 dB的CMRR、444 kHz的单位增益频率和71度的相位裕度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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