Multi Composition GeSi Tuneable Concentration Silicon-Germanium Wire Structures for CMOS Photonics

Abstract

In this presentation, we report for the first time Rapid Melt Growth SiGe based structures embedded in an SOI platform with constant siGe composition over the length of the SiGe wires. This method is suitable for waveguide integration on the SOI platform which is crucial for multi wavelength operation of Franz Keldysh type modulators.