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The Change of Self-heating according to Bottom Oxide and Package which are based on 3㎚ Multi-nanosheet Field Effect Transistor

Journal of the Institute of Electronics Engineers of Korea Pub Date : 2021-04-30 DOI:10.5573/IEIE.2021.58.4.9
C. Yoo, Hyunwoo Kim, Yoongeun Seon, Myounggon Kang, J. Jeon
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基于3㎚多纳米片场效应晶体管的底部氧化物和封装的自热变化
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Journal of the Institute of Electronics Engineers of Korea
Journal of the Institute of Electronics Engineers of Korea
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