Low RA tunnel-junctions with MgO-Barrier

INTERMAG 2006 - IEEE International Magnetics Conference Pub Date : 2006-05-08 DOI:10.1109/INTMAG.2006.374890

J. Longer, B. Ocker, W. Maass

引用次数: 0

Abstract

The utilization of MgO as tunnel barrier gave a new boost in the investigation of tunnel-junctions for storage and sensing applications. This paper discusses the deposition technique and the magnetic, electrical, and structural properties of MgO.

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低RA隧道结与镁-屏障

MgO作为隧道势垒的应用为研究隧道结的存储和传感应用提供了新的动力。本文讨论了氧化石墨烯的沉积工艺及其磁性、电学和结构性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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INTERMAG 2006 - IEEE International Magnetics Conference

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