Analysis of detection properties of particle detectors based on 4H-SiC high quality epitaxial layer

Abstract

The 4H polytype SiC is a promising material for radiation-resistant sensors of ionizing particles. In this work we focused on the analysis of active region thickness of detectors based on 4H-SiC. The detectors investigated are fabricated from a 105 μm epitaxial layer grown on 350 μm 4H-SiC substrate. The circular Schottky contacts with diameter of 1.4 mm using an Au/Ni double layer were evaporated onto both sides of the detector material. The capacitance-voltage measurements allowed us to estimate free carrier concentration profile. The second method consists of measuring detection efficiency of γ-rays at reverse bias voltages up to 500 V.