Thin film piezoelectric devices integrated on CMOS

Abstract

In this paper we present the demonstrated results on the integrated TFSAW resonance designed to be at 300MHz with an amplifier fabricated using "SilTerra MEMS on CMOS" process platform. The same process platform has been extended for the bulk acoustic mode resonator with a vacuum sealed thin film encapsulation. The thin film encapsulated FBAR device resonance is designed to be at 4.6 GHz.