High-resolution Rutherford backscattering spectroscopy for Nano-CMOS applications

Abstract

A compact high-resolution RBS (HKBS) system, consisting of a simple magnetic spectrometer and a small accelerator, is used for Nano-CMOS applications. The HKBS system has several attractive features, e.g. capability of depth profiling with monolayer depth resolution, small footprint, reasonably short measuring time. Several examples of the applications are presented, which include observation of high-k/Si interface using grazing-angl-esputtering-assisted HKBS, hydrogen depth profiling in gate dielectric films, and observation of Si emission from the SiO2/Si interface during oxidation of HfO2/SiO2/Si(001). These examples show that HKBS is a powerful tool for Nano-CMOS applications.